Engineering Low Dark Current Density for Ge-on-Si Photodiodes

Eveline Postelnicu,Stephanie Marzen,Ruitao Wen,Danhao Ma,Baoming Wang,Kazumi Wada,Jurgen Michel,Lionel Kimerling

2021 IEEE 17th International Conference on Group IV Photonics (GFP)（2021）

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摘要

We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al2O3 deposition at 250C removes all peripheral leakage components. These processes yield a mean value of Jd = 160nA/cm² at -1V.

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关键词

Annealing,PIN photodiodes,Conferences,Dark current,Photonics,Passivation,Aluminum oxide

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