Power Cycling Capabilities of Bond Buffer Technologies for Wide Bandgap Power Devices

2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)(2021)

引用 0|浏览0
暂无评分
摘要
Wide bandgap power devices with excellent performance over traditional silicon power devices have been introduced as the prime candidate for power electronics applications. However, interconnections on the chip topside in the traditional packaging are now limiting the lifetime of wide bandgap power devices. It is necessary to replace Al bond wires with Cu bond wires, ribbons, and lead-frames with ...
更多
查看译文
关键词
Performance evaluation,Photonic band gap,Silicon carbide,Wires,Asia,Packaging,Silicon
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要