Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

The tradeoff between breakdown voltage (BV) and specific ON-resistance ( ${R}_{{\mathrm{\scriptscriptstyle ON},\text {sp}}}$ ) has always been the most crucial designing indicator to power devices. In this article, based on the effective concentration profile (ECP) concept, a novel field plate-adaptive doping (FAD) technique is...