The Optimization of 3.3 kV 4H-SiC JBS Diodes

Arne Benjamin Renz,Vishal Ajit Shah,Oliver James Vavasour,Guy William Clarke Baker,Yegi Bonyadi,Yogesh Sharma,Vasantha Pathirana,Tanya Trajkovic,Phil Mawby,Marina Antoniou,Peter Michael Gammon

IEEE Transactions on Electron Devices（2022）

引用 6|浏览23

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摘要

The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, and molybdenum contact metals. In this design, the same implants used in the optimized termination region are used to form the P-regions in the JBS active area. The width and spacing of the P-regions are varied to optimize both the...

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关键词

Schottky diodes,Metals,Implants,P-i-n diodes,Nickel,Doping,Silicon carbide

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