Microwave MIM Capacitors Enabled by an iCVD N-type Parylene Dielectric for Flexible MMIC
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)（2021）
摘要
In this paper, microwave metal-insulator-metal (MIM) capacitors with high mechanical flexibility are presented by utilizing N-type parylene dielectric. The N-parylene copolymer dielectric is deposited atom by atom at room temperature via a solvent-free process called initiated chemical vapor deposition (iCVD), which is fully compatible with low-temperature fabrication request for plastic substrate...
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关键词
Flexible electronics,Microwave capacitor,Metal-in sulator-metal capacitor,N-parylene dielectric
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