Development and Thermal Characterization of a Low Resistance SiC Module
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)(2021)
摘要
A low conduction resistance 1200 V/ 4 m$\Omega$ SiC power module is fabricated and characterized for its thermal performance. The design and fabrication of the power module is presented. The parasitic resistance distribution from the module prototype is measured and shows that it is critical to minimize the source bond wire and contact resistance for such low on-state resistance module. The steady...
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关键词
Temperature measurement,Silicon carbide,Thermal resistance,Wires,Multichip modules,Steady-state,Thermal analysis
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