A Computing-in-memory Scheme with Series Bit-cell in STT-MRAM for Efficient Multi-bit Analog Multiplication

Zuolei Hao,Yue Zhang,Jinkai Wang,Hongyu Wang,Yining Bai,Guanda Wang,Weisheng Zhao

2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)（2021）

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摘要

Computing-in-memory (CIM) is widely studied to solve the Von Neumann bottleneck, which improves energy-efficient computing. In this work, we propose a CIM with series bit-cell (SBCIM) scheme, which can perform the multi-bit analog multiplication in spin-transfer torque magnetic random access memory (STT-MRAM). Utilizing the proposed bit-cell structure consisting of three transistors and one magnet...

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关键词

Torque,Simulation,Random access memory,Voltage,Nanoscale devices,Transistors,Time-domain analysis

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