Effect of argon plasma treatment on electronic properties of doped hydrogenated Silicon thin films for photovoltaic applications

Argon plasma treatment was performed on doped silicon thin films using a plasma-enhanced chemical vapor deposition (PECVD) process under a microwave frequency of 2.45 GHz. Initially, deposited silicon thin films were annealed for 1 hour under vacuum and then these films were plasma treated under a gaseous environment of argon using optimized conditions (power, pressure) for 30 minutes time duratio...