10 Nm Sio2 Tm Slot Mode In Laterally Mismatched Asymmetric Fin-Waveguides

FRONTIERS IN PHYSICS(2021)

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摘要
In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.
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关键词
silicon photonics, slot-mode, polarization conversion, misaligned photonic crystal, double-SOI, anisotropic wet etching
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