Heteroepitaxy of Dirac semimetal Cd3As2 by metal-organic chemical-vapor deposition

C.R. Tait,S.R. Lee,J.I. Deitz,M.A. Rodriguez, D.L. Alliman,B.P. Gunning,G.M. Peake, A. Sandoval, N.R. Valdez,P.R. Sharps

Journal of Crystal Growth（2021）

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摘要

•First growth of Dirac semimetal Cd3As2 by metalorganic chemical vapor deposition.•Films are 5–75 nm thick and consist of epitaxially oriented, coalesced polycrystals.•Well-optimized films exhibit rms surface roughnesses as low as 1.0 nm.•X-ray studies reveal a thin-film crystallographic structure consistent with P42/nbc.

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关键词

A3. Metalorganic chemical vapor deposition,A1. High resolution x-ray diffraction,A3. Metalorganic vapor phase epitaxy,B1. Cadmium compounds,A1. Characterization,B2. Semiconducting cadmium compounds

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