Investigation on the sawing temperature in ultrasonic vibration assisted diamond wire sawing monocrystalline silicon

In this paper, the effects of different sawing parameters (wire saw speed vs, feed rate vw, workpiece rotation speed nw) and ultrasonic vibration on the sawing temperature in diamond wire sawing monocrystalline silicon were studied. Firstly, the finite element model in diamond wire sawing monocrystalline silicon is established with respect to the thermal transient analysis in ANSYS. Then the influence of different sawing parameters and ultrasonic vibration on the sawing temperature during the sawing process is simulated and analyzed. Finally, the experiment of diamond wire sawing monocrystalline silicon is accomplished to validate the simulation results. The results show that the highest sawing temperature in conventional diamond wire sawing (CWS) is 27.9 °C and that in ultrasonic vibration assisted diamond wire sawing (UAWS) is 29.9 °C. In addition, with the increase of wire saw speed, feed rate and workpiece rotation speed, the sawing temperature increases averagely by about 3.6 °C, 1.6 °C, and 2.0 °C respectinvely in CWS, and the sawing temperature in UAWS increases averagely by 3.7 °C, 1.5 °C and 1.5 °C. The sawing temperature in UAWS is about 1.5 °C higher than that in CWS under the same sawing parameters. The average error between the simulation and experimental results of highest sawing temperature is 8.6% and the maximum error is 14%, which verifies the simulation model.