Channel Doping Effects In Negative Capacitance Field-Effect Transistors

The channel doping effects in negative capacitance field-effect transistors (NCFETs) of the metal-ferroelectric-insulator-semiconductor (MFIS) structure are analysed in this work, and an analytical model is developed. The NCFET threshold voltage with channel doping is defined, and a nonmonotonic dependence on the doping concentrations is predicted. A unified charge formulation is developed for the current-voltage characteristics of double gate MFIS structures. Statistical modelling for NCFETs is further developed. Standard deviations of four parameters are extracted, reproducing the distributions of NCFET current-voltage characteristics. Experimental calibrated TCAD simulations validate the analytical model for wide ranges of device parameters, allowing its application to devices and circuits.