A Tunable Macro-Modeling Method for Signal Transition in mm-Wave Flip-Chip Technology

2021 IEEE 25th Workshop on Signal and Power Integrity (SPI)(2021)

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摘要
In this work, a method for developing a lumped-element circuit macro-modeling of micro/millimeter-wave flip-chip ball interconnects is proposed. The developed macro-model considers the effects of the transmission-line behavior of interconnects as well as the substrate physical characteristics of the chip and the printed circuit board (PCB). Full-wave simulations are used to generate the circuit model for a ground-signal-ground (GSG) bump structure. The derived highly efficient circuit model is verified against a full-wave simulation tool, proving a good agreement. Using the proposed modeling method, the impact of the flip-chip technology package on the electrical performance of high-speed electronic systems can be investigated in the pre-layout design stages that provides room for significant improvements.
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关键词
flip-chip technology,lumped element model,millimeter-wave interconnect,package
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