A 7nm 256mb Sram In High-K Metal-Gate Finfet Technology With Write-Assist Circuitry For Low-V-Min ApplicationsJonathan Chang,Yen-Huei Chen,Wei-Min Chan,Sahil Preet Singh,Hank Cheng,Hidehiro Fujiwara,Jih-Yu Lin,Kao-Cheng Lin,John Hung,Robin Lee,Hung-Jen Liao,Jhon-Jhy Liaw,Quincy Li,Chih-Yung Lin,Mu-Chi Chiang,Shien-Yang Wu2017 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)（2017）引用 0|浏览3暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
