Mechanism Of Nanohills Growth In Si(1-X)Ge(X)/Si Structure By Laser Radiation

INTERNATIONAL CONFERENCE ON RADIATION INTERACTION WITH MATERIALS AND ITS USE IN TECHNOLOGIES 2008(2008)

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摘要
This work is to study the mechanism of nanohills growth in Si(1-x)Ge(x)/Si structure by laser radiation. P-type Si (001), i-type Ge crystals and Si(0.7)Ge(0.3)/Si heteroepitaxial structure were irradiated by nanosecond Nd:YAG laser pulses.
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关键词
Si(1-x)Ge(x)/Si,Ge,SiO(2)/Si,nanostructures,Thermogradient effect
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