Significant Increment Of The Dielectric Permittivity And Domain Properties In The (1-X)Pbtio3-X(Na0.5bi0.5)Tio3 Crystals

Crystals of PbTiO3 and 0.9PbTiO(3)-0.1(Na0.5Bi0.5)TiO3 were obtained by the flux growth method whereas crystals of (Na0.5Bi0.5)TiO3 were growth by the Czochralski method. Raman spectroscopy and polarized light microscopy were performed at room temperature. The Raman spectra of 0.9PbTiO(3)-0.1(Na0.5Bi0.5)TiO3 shown significant changes comparing to the base materials PbTiO3 and (Na0.5Bi0.5)TiO3. A domain structure was investigated by use polarized light microscopy. Dielectric permittivity measurements were carried out in the temperature range from 20 degrees C to 550 degrees C and a frequency from 1 kHz to 1 MHz. These showed higher dielectric permittivity for the crystals 0.9PbTiO(3) -0.1(Na0.5Bi0.5)TiO3 than the source materials PbTiO3 and (Na0.5Bi0.5)TiO3.The high value of dielectric constant makes it possible to applied 0.9PbTiO(3) -0.1(Na0.5Bi0.5)TiO3 as efficient dielectric medium in a capacitors. The small size of the domain structure with the easy possibility of switching by application of an external electric field, give opportunities to apply these materials to FRAM memory applications. Moreover, the high sensitivity of these materials to the surrounding gases e.g. ammonia, chlorine, hydrogen, etc., allows the construction of sensor devices.