A Novel High-Gain Amplifier Circuit Using Super-Steep-Subthreshold-Slope Field-Effect Transistors

2021 IFIP/IEEE 29th International Conference on Very Large Scale Integration (VLSI-SoC)(2021)

引用 3|浏览6
暂无评分
摘要
The benefits of steep-Subthreshold Swing (SS) devices, though plentiful at the device-level, have yet to be fully exploited at the circuit-level. This is evident from a look at the Three-Independent-Gate Field-Effect Transistor (TIGFET), a device renown for its ability for polarity reconfiguration. At the same time, its demonstrated dynamic control of the subthreshold slope beyond the thermal limi...
更多
查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要