Symmetric Reconfigurable Ferroelectric Transistor for Non-Volatile Memories to Diminish the Effects of Gate Leakage
IEEE Transactions on Electron Devices(2021)
摘要
Reconfigurable ferroelectric transistor (R-FEFET) is a variant of a ferroelectric transistor (FEFET), which utilizes two asymmetrically sized gate stacks to achieve voltage-controlled modulation in hysteresis and dynamic reconfigurability between volatile and non-volatile modes. However, due to a floating internal metal layer (IML), gate leakage (GL) can lead to a polarization-dependent shift in d...
更多查看译文
关键词
Iron,FeFETs,Nonvolatile memory,Transistors,Logic gates,Hysteresis,Switches
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要