Self-Driven Sns1-Xsex Alloy/Gaas Heterostructure Based Unique Polarization Sensitive Photodetectors

With the fast development of semiconductor technology, self-driven devices have become an indispensable part of modern electronic and optoelectronic components. In this field, in addition to traditional Schottky and p-n junction devices, hybrid 2D/3D semiconductor heterostructures provide an alternative platform for optoelectronic applications. Herein we report the growth of 2D SnS1-xSex (x = 0, 0.5, 1) nanosheets and the construction of a hybrid SnS0.5Se0.5/GaAs heterostructure based self-driven photodetector. The strong anisotropy of 2D SnS1-xSex is demonstrated theoretically and experimentally. The self-driven photodetector shows high sensitivity to incident light from the visible to near-infrared regime. At the wavelength of 405 nm, the device enables maximum responsivity of 10.2 A W-1, high detectivity of 4.8 x 10(12) Jones and fast response speed of 0.5/3.47 ms. Impressively, such a heterostructure device exhibits anisotropic photodetection characteristics with the dichroic ratio of similar to 1.25 at 405 nm and similar to 1.45 at 635 nm. These remarkable features can be attributed to the high-quality built-in potential at the SnS0.5Se0.5/GaAs interface and the alloy engineering, which effectively separates the photogenerated carriers and suppresses the deep-level defects, respectively. These results imply the great potential of our SnS0.5Se0.5/GaAs heterostructure for high-performance photodetection devices.