First Principle Study of Electronic Property of Doped/Undoped Graphene Structure for Interconnect Application

Emerging trends in the VLSI industry open a new way to explore the electronic behavior of the novel graphene due to fundamental limitations (physical and geometrical) of silicon CMOS technology. In order to accomplish it, the structural behavior of graphene under the influence of different intercalation doping materials is investigated using spin-polarized density functional theory (DFT) and noneq...