On MX 2 -based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation

Field-effect device concepts with 2-D semiconductors as channels have been proposed as an alternative to Si based CMOS beyond the 3nm node. A MX 2 MOS capacitor differs from its Si counterpart primarily in electrostatics due to its ultra-thin, fully depleted body. In addition, the possibility of having both a top and a back gate enables multi-threshold single-gate operations or a connected dual-ga...