Reducing Thickness Deviation of W-Shaped Structures in Manufacturing DRAM Products Using RSM and ANN_GA

IEEE Transactions on Components, Packaging and Manufacturing Technology（2021）

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摘要

Thickness deviation on a W-shaped structure of word lines in dynamic random access memories (DRAMs) is detrimental to the DRAM manufacturing’s yield rate. The case company has suffered from a low yield rate in their DRAM manufacturing due to large thickness deviations on the W-shaped structures. This article proposed a new approach to find an appropriate setting of manufacturing control factors’ v...

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关键词

Random access memory,Manufacturing,Companies,Response surface methodology,Genetic algorithms,Capacitors,Transistors

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