Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction

Sara Choi,Hong Keun Ahn,Byungkyu Song,Seung H. Kang,Seong-Ook Jung

IEEE Transactions on Circuits and Systems I: Regular Papers（2021）

引用 3|浏览7

暂无评分

摘要

Essential design requirements for a sense amplifier (SA) used in the resistance monitoring write termination (RM-WT) scheme are suggested to reduce the write energy of spin-transfer-torque random access memory (STT-RAM) while achieving a write pass yield comparable to that of a conventional write operation. In addition, a self-referenced single-ended RM-WT (SS-RM-WT) scheme is proposed. To reduce ...

查看译文

关键词

Magnetic tunneling,Switches,Transistors,Sensors,Resistance,Phase change random access memory,Magnetic separation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要