HfO2-based FeFET and FTJ for Ferroelectric-Memory Centric 3D LSI towards Low-Power and High-Density Storage and AI Applications

Masumi Saitoh,Reika Ichihara,Marina Yamaguchi,Kunifumi Suzuki,Keisuke Takano, Keisuke Akari,Kota Takahashi,Yuta Kamiya,Kazuhiro Matsuo,Yuuichi Kamimuta,Kiwamu Sakuma,Kensuke Ota,Shosuke Fujii

2020 IEEE International Electron Devices Meeting (IEDM)（2020）

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摘要

We present the recent progress in HfO ₂ -based ferroelectric FET (FeFET) and ferroelectric tunnel junction (FTJ) memory towards low-power and high-density storage and AI applications. A huge amount of interface trap charges coupled to spontaneous polarization significantly alters the operating model and improvement guideline of HfO ₂ FeFET irrespective of elements doped into HfO ₂ . Performance and reliability of in-memory reinforcement learning (RL) with HfO ₂ FTJ array are enhanced by improving the characteristics of FTJ memory cells.

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关键词

FTJ memory cells,high-density storage,AI applications,interface trap charges,in-memory reinforcement,ferroelectric-memory centric 3D LSI,FTJ array,FeFET,ferroelectric tunnel junction memory,low-power storage,in-memory reinforcement learning,HfO2

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