Dispersive vs charge-sensing readout for linear quantum registers
international electron devices meeting(2020)
摘要
We present recent progress in the implementation of scalable schemes for spin qubit readout in one dimensional quantum registers based on fully-depleted silicon-on-insulator (FDSOI) technology. We compare two schemes both based on rf gate reflectometry. The first one, denoted as dispersive readout, minimizes the device overhead thereby facilitating scale-up to large qubit registers. The second one, denoted as charge-sensing readout, requires additional readout components but is less sensitive to the strength of the interdot coupling facilitating operation in the few-electron regime. We demonstrate single-shot charge sensing with a fidelity of 97% in 5 μs. Finally, we propose a scalable device architecture for linear qubit registers relying on charge-sensing readout.
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关键词
dimensional quantum registers,fully-depleted silicon-on-insulator technology,rf gate reflectometry,dispersive readout,charge-sensing readout,additional readout components,single-shot charge,linear qubit registers,linear quantum registers,scalable schemes,spin qubit readout
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