Impact of mechanical strain on wakeup of HfO2 ferroelectric memory

This work investigates the impact of mechanical strain on wake-up behavior of planar HfO2 ferroelectric capacitor-based memory. External in-plane strain was applied using a four-point bending tool and strain impact on remanent polarization and coercive voltage of the ferroelectric was monitored. It was established that compressive strain is beneficial for 2Pr improvement, while tensile strain lead...