Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS

In this paper, we obtained interface trap density through source-drain CP (charge pumping) current, instead of conventional substrate CP current in MOSFETs and LDMOS. We observed that interface density is same for both source drain CP current and substrate CP current when LOCOS (local oxidation of Silicon) field oxide is used to separate substrate (body) and source in different channel MOSFETs. Ho...