Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration
IEEE Transactions on Electron Devices(2020)
摘要
We experimentally demonstrate back-end-of-the-line (BEOL) compatible (<;250 °C thermal budget)1% tungsten (W)-doped amorphous In
2
O
3
(IWO) back-gate field-effect transistor (BGFET) and dual-gate field-effect transistor (DGFET) with 7-nm channel thickness. The 100-nm channel length IWO DGFET exhibits excellent subthreshold slope of 73 mV/decade, record I
D,SAT
of 370 μA/μm, and on-off ratio > 4 × 10
9
at V
DS
= 1 V and V
GS
-V
TH
= 2 V. We identify fundamental transport mechanisms that limit electron mobility in amorphous IWO transistors at different gate-bias (V
GS
) and temperature. Benchmarking reveals that amorphous IWO FETs are promising candidate for in situ transistor fabrication in the BEOL for enabling high-performance monolithic 3-D (M3-D) integrated circuits.
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关键词
A-indium tungsten oxide (IWO),back-end-of-the-line (BEOL),field-effect mobility,monolithic 3-D (M3-D),specific contact resistivity
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