Publisher's Note: In-plane Schottky-barrier field-effect transistors based on 1 T / 2 H heterojunctions of transition-metal dichalcogenides [Phys. Rev. B 96 , 165402 (2017)]Zhi-Qiang Fan,Xiang-Wei Jiang,Jun-Wei Luo,Li-Ying Jiao,Ru Huang,Shu-Shen Li,Lin-Wang WangPhysical Review B（2021）引用 0|浏览10暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
