Preparation Of Single Crystalline Aln Thin Films On Zno Nanostructures By Atomic Layer Deposition At Low Temperature

The growth of hetero-epitaxial ZnO-AlN core-shell nanowires (NWs) and single crystalline AlN films on non-polar ZnO substrate at temperature of 380 degrees C by atomic layer deposition (ALD) was investigated. Structural characterization shows that the AlN shells have excellent single-crystal properties. The epitaxial relationship of [0002](ZnO)//[0002](AlN), and [10-10](ZnO)//[10-10](AlN) between ZnO core and AlN shell has been obtained. The ZnO NW templates were subsequently removed by annealing treatment in forming gas, resulting in ordered arrays of AlN single-crystal nanotubes. The impact factors on the epitaxial growth of AlN films are thoroughly investigated. It turned out that the growth parameters including lattice mismatch between substrate and AlN, growth temperature, and the polarity of ZnO substrate play important roles on the growth of single-crystal AlN films by ALD. Finally, non-polar AlN films with single-crystalline structure have been successfully grown on m-plane ZnO (10-10) single-crystal substrates. The as-grown hollow AlN nanotubes arrays and non-polar AlN films with single-crystalline structures are suggested to be highly promising for applications in nanoscale devices. Our research has developed a potential method to obtain other inorganic nanostructures and films with single-crystalline structure at fairly low temperature.