A novel multi-physics field optimization method for GaN HEMT circuit design

A device modeling and topology design method suitable for high-power-density and high-temperature applicationare important to develop with the development of devices. A novel multi-physics analysis model based on GaN high electron mobility transistor (HEMT) is proposed in this paper. The coupled electromagnetic and electrothermal model for GaN HEMT is beneficial to simulate a device’s external characteristic waveform affected by different stray parameters in the surrounding. In addition, the proposed method can accurately reflect the switching loss and transient switching process of GaN HEMT.