Comprehensive Investigations on Data Pattern Dependences in Charge-trap (CT) 3D NAND Flash Memory

Yachen Kong,Xueyang Peng,Fei Wang,Menghua Jia,Xuepeng Zhan,Yuan Li,Jiezhi Chen

international conference on solid state and integrated circuits technology（2020）

引用 3|浏览0

暂无评分

摘要

Data pattern impacts on the error bits' generations in charge-trap (CT) 3D NAND flash memory are studied systematically by the NAND chip tester. Similar to the inter-cell-interference casued data pattern dependence in its 2D counterpart, data pattern dependences still exist in 3D NAND chip, which turns to be more serious after P/E cycling. The underlying mechanism originates from the lateral charge migration (LCM) in the common CT layer, which can be well evidenced by TCAD simulations. Our results could guide the design of coding approaches to enhance the reliability of 3D NAND flash based storages with correlated data patterns.

查看译文

关键词

LCM,lateral charge migration,P-E cycling,3D NAND flash based storages,TCAD simulations,intercell interference,CT 3D NAND flash memory,3D NAND chip,data pattern dependences,data pattern dependence,NAND chip tester,charge-trap 3D NAND flash memory

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要