2X-Bandwidth Burst 6T-SRAM for Memory Bandwidth Limited Workloads

Charles Augustine,Somnath Paul,Turbo Majumder,James Tschanz,Muhammad Khellah,Vivek De

2020 IEEE Symposium on VLSI Circuits（2020）

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摘要

A 20KB 6T-SRAM array in 10nm CMOS demonstrates 2X higher read bandwidth in burst mode operation. The doubling of bandwidth is achieved with 51% higher energy efficiency than frequency doubling and 30% better area efficiency than doubling the number of banks.

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关键词

2X-bandwidth burst 6T-SRAM,memory bandwidth limited workloads,20KB 6T-SRAM array,CMOS,2X higher read bandwidth,burst mode operation,frequency doubling

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