Research on 1/f noise degradation of GaN LED caused by gamma radiation under high bias

GaN-based blue light-emitting diodes (LEDs) were radiated with(60)Co gamma-rays for an accumulated dose of up to 2.5 Mrad (SiO2). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the high bias voltage. The current of GaN blue LED is determined by series resistance at the high bias voltage. Defects created by gamma radiation in the LED lead to an increase in the series resistance, which causes the decrease of current. Based on the theory of Hooge mobility fluctuations, it suggests that the degradation of 1/f noise might also be attributed to these defects, which caused a decrease in the carrier mobility and the carrier number.