High line density fused silica transmission gratings by deep reactive ion beam etching for ultra-short pulse laser compression

In this note, we present our results about the process design and characterization of deep reactive ion beam etching of high line density fused silica transmission gratings. Up to 1 mu m deep and 1880 lines/mm microstructures have been successfully fabricated for 532nm ultrashort pulse laser pulse compression using the developed processes. Considering the requirements of the manufacturing process, a certain range of parameters needs to be determined to reduce the need for etching precision. Therefore, in this paper, the strict coupling wave method is used to determine the parameter range of the grating in the range of the calculated grating parameters, and the diffraction efficiency of the simplified mode method can be calculated. To our knowledge, this is the first note on the design parameters of transmission pulse compression grating made on fused quartz substrate are given using the simplified mode method to design and a non-ICP-based reactive ion etcher.