Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition

Pulsed chemical vapor deposition (CVD), or more correctly atomic layer deposition (ALD) outside of the ALD thermal window, was used to grow vanadium pentoxide films using Tetrakis(dimethylamino)vanadium (IV) (V(NMe2)(4)) as the vanadium source and either oxygen-argon plasma, oxygen or water as the co-reagent. Growths were performed at 150-300 degrees C for 400 cycles, resulting in a range of both stoichiometric and non-stoichiometric vanadium oxides. Post growth annealing in air at 400 degrees C for both thermal and plasma assisted methods resulted in the formation of alpha-V2O5. Electrochemical characterization revealed that the samples grown at 250 degrees C using a plasma process and a post growth anneal demonstrate the best electrochemical properties in terms of current density and charge density with values of 0.35 mAcm(-2)and 55 mCcm(-2) respectively. The influence of growth parameters on material properties is discussed.