On-chip selective growth of SnO2 nanowires for DNA sensor development

•Selective growth of tin oxides nanowires was conducted by modified chemical vapor deposition technique with supporting shadow mask.•Time and distance evolution of Sn mass transport in the chemical vapor deposition system was described by Comsol Multiphysics.•A root-growth model was proposed to discuss about growth mechanism of the nano wires in which an insolubility of SnO2 in Au–Sn phase was considered.•Simple surface modification and immobilization of a DNA sensor was conducted by tin oxide nanowire followed by ATPES hydroxylation.•Differential voltage measurements were conducted to detect DNA hybridization. The response time was 2.5 s and the limit of detection was 3.2 pM.