Research on the ability of over current in Ti/NbO x /Pt-based selector

In this work, the devices of Ti/NbO x /Pt with and without annealing process were prepared by magnetron sputtering method, which exhibited threshold switching characteristics as selector caused by insulator–metal transition (IMT) effect. The threshold switching characteristics of normal device (ND) and annealed device (AD) under large compliance current (CC) were comprehensively investigated. AD had better stability and resistance consistency of OFF state than that of ND. Pulse test further demonstrated that the AD displayed excellent performance after applying over current. Generally, AD has a greater potential to avoid sneak path current for high-density memory device.