Predicting quantum spin hall effect in graphene/GaSb and normal strain-controlled band structures

Xinxin Wang,Naifeng Shen,Jun Wu,Baolin Wang,Jianguo Wan

Applied Surface Science（2020）

引用 1|浏览19

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摘要

•The energy gap of Gr is opened upon Gr combining with GaSb.•The electronic properties are improved remarkably by hydrogen passivation.•The electronic structures are effectively controlled by normal strain.•H-BN is verified to be a suitable substrate to Gr/GaSb heterostructure.

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关键词

Graphene,GaSb,Spin hall effect,Heterostructure,Normal strain

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