3D simulations of new low capacitance silicon pixel detectors

We propose a novel electrode structure that reduces the detector capacitance by employing a metal electrode with much reduced area as compared to the detector sensitive area. We found that by doing so, the full depletion voltage of the detector will increase due to the added lateral depletion between open areas of the same electrode. Therefore, this paper aims to optimize the performance of the detector by designing a reasonable electrode shape, weighing the relationship between capacitance and the required depletion voltage. Then, we compare the capacitance by simulating in detail the newly designed detector and compare with that in a traditional detector using a Silvaco TCAD simulation tool. And we show the depletion voltage, potential and electric field of two critical cross-sections of the newly designed detector.