Investigating Of Ser In 28 Nm Fdsoi-Planar And Comparing With Ser In Bulk-Finfet

Taiki Uemura,Byungjin Chung,Jeongmin Jo,Hai Jiang,Yongsung Ji,Tae-Young Jeong,Rakesh Ranjan, Youngin Park, Kiil Hong,Seungbae Lee,Hwasung Rhee,Sangwoo Pae,Euncheol Lee,Jaehee Choi,Shota Ohnishi, Ken Machida

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)（2020）

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摘要

This paper investigates soft error in memories and logic circuits in 28 nm planar-FDSOI technology by neutron, alpha, proton, and gamma-ray irradiation tests, and compares with SER in bulk-FinFET. The comparison elucidates the different SER trends between planar-FDSOI and bulk-FinFET.

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关键词

Soft error, Single event, TID, SEU, SET

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