Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device

We demonstrate a hybrid memory device with both memory and selector characteristics by using Al2O3 (memory) and TiO2 (selector) layers. The proposed device exhibits tunable threshold voltage characteristics based on the length of the residual conductive filament (CF) in the Al2O3 layer. To confirm the switching characteristics, the stability of the metallic CFs in each of the Al2O3 and TiO2 layers...