InGaAs Schottky technology for THz mixers

This paper presents a theoretical analysis of the capabilities of InGaAs Schottky diodes as mixers in the THz band. InGaAs diodes are interesting because of their low barrier height compared with GaAs diodes, which yield a reduction in required LO power. In order to provide a reliable and accurate description of the electrical and noise performance of InGaAs mixers, a Monte Carlo model of the diode coupled to a multi-tone harmonic balance technique has been used in this work. Progress towards the development of THz InGaAs Schottky diode mixers at STFC-RAL Space is also presented.