Sensitivity Analysis for Random Dopant Fluctuation in DG MOSFET using Regression Model

Random dopant fluctuation has been constantly noticed in double gate metal-oxide-semiconductor field effect transistor. It causes several problems in the device such as threshold voltage shift and drive current variation. In this paper, a regression model is proposed to provide sensitivity of drive current. For the regression model, the numerical model is built and compared the results with a commercial TCAD simulated results for the verification.