Ultra-fast (ns-scale) Characterization of NBTI Behaviors in Si pFinFETs

IEEE Journal of the Electron Devices Society(2020)

引用 6|浏览9
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摘要
In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time down to ns-scale utilizing the fast Vth measurement (FVM) technique. It is found that the NBTI behaviors in terms of Vth shift is strongly influenced by the measurement speed even in the nano-second scale (ns-scale). The measurement phase itself during the NBTI characterization could bring in an additional Vth...
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关键词
Negative bias temperature instability,Thermal variables control,Stress,Time measurement,Temperature measurement,Voltage measurement,Stress measurement
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