A High Performance, Multi-Bit Output Logic-in-Memory Adder

Javad Talafy,Farzaneh Zokaie,Hamid Reza Zarandi,Nader Bagherzadeh

IEEE Transactions on Emerging Topics in Computing（2021）

引用 5|浏览10

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摘要

Alternative approaches beyond charge-only-based electronics, and particularly, spin-based non-volatile (VN) devices, show promising potential to overcome power and latency issues. The NV spin-transfer torque magnetic random access memory (STT-MRAM), as one of the NV candidates can provide for the digital world the opportunity of an instant-on/off computing system design. It reduces both static and...

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关键词

Adders,Switches,Nonvolatile memory,Magnetic tunneling,Power demand,Magnetic fields,Reliability

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