Study of the HPM Interference Effect on Integrated Circuit in a TEM Cell

Xue-Cheng Xu,Chun-Yong Han,E Shao,Xiang-Jun Lu,Wen-Xiao Fang,Rong-Quan Chen,Heng-Zhou Liu,Wei-Heng Shao,Yun-Lei Shi

2019 International Conference on Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE)（2019）

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摘要

In this paper, HPM is used as the source of interference to affect the working state of an integrated circuit. The effect of the injected power and the orientation of the studied integrated circuit (FPGA) is investigated. In the experiment, it is found that the induced voltage of the I/O pin can reach 70.3 V under the electromagnetic field high to 1257.44 V/m. In spite of this, the working state of the FPGA remained normal.

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关键词

high-power microwave (HPM),integrated circuit,FPGA,TEM cell

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