Near-infrared Photodetection Based on Topological Insulator P-N Heterojunction of SnTe/Bi2Se3

Applied Surface Science(2020)

引用 53|浏览8
暂无评分
摘要
•High-quality topological p-n junction of SnTe/Bi2Se3 was prepared.•Near-infrared photodetector with large photocurrent and fast speed was fabricated.•It provides an platform to investigate energy-band coupling of topological insulator.
更多
查看译文
关键词
Topological insulator,Heterostructure,Near-infrared photodetector,Ultrafast response
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要