A Predictive Process Design Kit for Three-Independent-Gate Field-Effect Transistors

The Three-Independent-Gate Field-Effect Transistor (TIGFET) is a promising beyond-CMOS technology which offers multiple modes of operation enabling unique capabilities such as the dynamic control of the device polarity and dual-threshold voltage characteristics. These operations can be used to reduce the number of transistors required for logic implementation resulting in compact logic designs and reductions in chip area and leakage current.