High-speed and Ultra-low Power IoT One-chip (MCU + Connectivity-chip) on a Robust 28-nm Embedded Flash Process
2019 Symposium on VLSI Technology(2019)
摘要
Based on robust 28-nm embedded flash (eFlash) process, IoT One-chip for high-speed and low power applications which MCU-chip (10Mb eFlash) and connectivity-chip (BLE/Zigbee) are integrated for the first time. By introducing new devices on 28-nm low-power eFlash process, high-speed ( random read), ultra-low power sleep mode current, 10/13mA RF current at Tx/Rx mode) and robust reliability (-40 ~ 125°C stable operation, 100K cycle endurance, 150C/RT retention up to 200K hours) are achieved. LDD-first IO transistor with low Vth (~0.5V) for low-Vdd (~1.0V) operation [1] and ultra-low leakage (ULL) SRAM bit-cell (0.1x vs. normal) supporting low sleep mode chip current are applied to extend battery life-time. Stable endurance and high (/low)-temperature retention after cycling stress are achieved by robust split-gate type eFlash cell.
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关键词
high-temperature retention,robust split-gate type eFlash cell,connectivity-chip,low power applications,MCU-chip,ultra-low leakage SRAM bit-cell,low sleep mode chip current,embedded flash process,low-power eFlash process,ultra-low power IoT one-chip,high-speed IoT one-chip,ultra-low power sleep mode current,RF current,LDD-first IO transistor,BLE,Zigbee,temperature 125.0 degC,current 10.0 mA,temperature 100.0 K,current 13.0 mA,voltage 0.5 V,voltage 1.0 V,size 28 nm
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